Panasonic 2SD1051
Silicon NPN epitaxial planer type Transistor
FEATURES
q q q 1.5 R0.9 R0.9 0.85 0.55±0.1 0.45±0.05 1.25±0.05 sABSOLUTE MAXIMUM RATINGS
Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature * (Ta=25˚C) Ratings 50 40 5 3 1.5 1 150 –55 ~ +150 1cm2 Unit V V V A A W ˚C ˚C 1:Base 2:Collector 3:Emitter 2.5 2.5 3 2 1 Symbol VCBO VCEO VEBO ICP IC PC* Tj Tstg EIAJ:SC–71 M Type Mold Package Printed circuit board: Copper foil area of thickness of 1.7mm for the collector portion or more, and the board sELECTRICAL CHARACTERISTICS
Parameter Collector cutoff current Emitter cutoff current Collector to base voltage Collector to emitter voltage Forward current transfer ratio Collector to emitter saturation voltage Base to emitter saturation voltage Transition frequency Collector output capacitance (Ta=25˚C) Symbol ICBO ICEO IEBO VCBO VCEO hFE *1 Conditions VCB = 20V, IE = 0 VCE = 10V, IB = 0 VEB = 5V, IE...