Panasonic 2SD1211
Silicon NPN Transistor
| Part No. | 2SD1211 |
|---|---|
| Datasheet | 2SD1211 Download |
| Manufacturer |  Panasonic |
| Description | Silicon NPN Transistor |
| Buy | Stock & Price |
FEATURES
q q High collector to emitter voltage VCEO. Optimum for the driver-stage of a low-frequency and 40 to 60W output amplifier. (Ta=25˚C) Ratings 120 120 5 1 0.5 1 150 –55 ~ +150 Unit V V V A A W ˚C ˚C 1.27 0.45–0.1 +0.2 Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg 13.5± 0.5 sABSOLUTE MAXIMUM RATINGS
2.54± 0.15 0.7–0.2 +0.3 0.7± 0.1 8.6± 0.2 0.45–0.1 1.27 +0.2 sELECTRICAL CHARACTERISTICS
Parameter Collector to emitter voltage Emitter to base voltage Forward current transfer ratio Collector to emitter saturation voltage Base to emitter saturation voltage Transition frequency Collector output capacitance (Ta=25˚C) Symbol VCEO VEBO hFE1* hFE2 VCE(sat) VBE(sat) fT Cob Conditions IC = 0.1mA, IB = 0 IE = 10µA, IC = 0 VCE = 10V, IC = 150mA VCE = 5V, IC = 500mA IC = 300mA, IB = 30mA IC = 300mA, I...