Panasonic 2SD1244
Silicon NPN Transistor
FEATURES
q q 1.5 0.4 1.5 R0.9 R0.9 0.85 0.55±0.1 0.45±0.05 1.25±0.05 sABSOLUTE MAXIMUM RATINGS
Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature * (Ta=25˚C) Ratings 40 20 7 8 5 1 150 –55 ~ +150 1cm2 Unit V 3 2 1 Symbol VCBO VCEO VEBO ICP IC PC* Tj Tstg 2.5 2.5 V V A A W ˚C ˚C 1:Base 2:Collector 3:Emitter EIAJ:SC–71 M Type Mold Package Printed circuit board: Copper foil area of thickness of 1.7mm for the collector portion or more, and the board sELECTRICAL CHARACTERISTICS
Parameter Collector cutoff current Emitter cutoff current Collector to emitter voltage Emitter to base voltage Forward current transfer ratio Collector to emitter saturation voltage Transition frequency Collector output capacitance (Ta=25˚C) Symbol ICBO IEBO VCEO VEBO hFE1 hFE2 VCE(sat) fT Cob *1 Conditions VCB = 10V, IE = 0 VEB = 7V, IC = 0 IC = 1mA, IB = 0 IE = 10µA, I...