Panasonic 2SD1250A
Silicon NPN triple diffusion planar type Power Transistor
FEATURES
● High forward current transfer ratio hFE which has satisfactory linearity● Low collector-emitter saturation voltage VCE(sat)
● N type package enabling direct soldering of the radiating fin to the printed circuit board, etc. of small electronic equipment.
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ABSOLUTE MAXIMUM RATINGS
TC = 25°C Parameter Symbol Rating Collector-base voltage (Emitter open) Collector-emitter voltage 2SD1250 (Base open) 2SD1250A VCBO VCEO 200 150 180 Emitter-base voltage (Collector open) Collector current Peak collector current Collector power dissipation Junction temperature Ta = 25°C Storage temperature VEBO IC ICP PC Tj Tstg 6 2 3 30 1.3 150 −55 to +150 Unit V V V A A W °C °C 4