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2SD1264A Datasheet PDF

Panasonic 2SD1264A

Silicon NPN triple diffusion Transistor

Part No. 2SD1264A
Datasheet 2SD1264A Download
Manufacturer
Panasonic
Description Silicon NPN triple diffusion Transistor
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2SD1264A datasheet page 1 preview

ABSOLUTE MAXIMUM RATINGS

(TC=25˚C) Parameter Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg Ratings –200 –200 –150 –180 –6 –3 –2 30 2 150 –55 to +150 Unit V 2SB940 2SB940A 2SB940 Collector to base voltage Collector to emitter voltage 2SB940A Emitter to base voltage Peak collector current Collector current Collector power TC=25°C dissipation Ta=25°C Junction temperature Storage temperature V V A A W ˚C ˚C Solder Dip 4.0 7.5±0.2 s

FEATURES

1:Base 2:Collector 3:Emitter TO–220 Full Pack Package(a) s

ELECTRICAL CHARACTERISTICS

Parameter Collector cutoff current Emitter cutoff current Collector to base voltage Collector to emitter voltage 2SB940 2SB940A (TC=25˚C) Symbol ICBO IEBO VCBO VCEO VEBO hFE1 hFE2 VBE VCE(sat) fT * Conditions VCB = –200V, IE = 0 VEB = –4V, IC = 0 IC = –50µA, IE = 0 IC = –5mA, IB = 0 IE = –500µA, IC = 0 VCE = –10V, IC = –150mA VCE = –10V, IC = –400mA VCE = –10V, IC = –400mA IC = –500mA, IB = –50mA VCE = –10V, IC = – 0.5A, f = 10MHz min typ max –50 –50 Unit µA µA V V V –200 –1...
2SD1264A page 2 preview