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2SD1280 Datasheet PDF

Panasonic 2SD1280

Silicon NPN Transistor

Part No. 2SD1280
Datasheet 2SD1280 Download
Manufacturer
Panasonic
Description Silicon NPN Transistor
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2SD1280 datasheet page 1 preview

FEATURES

q q 4.5±0.1 1.6±0.2 1.5±0.1 q Low collector to emitter saturation voltage VCE(sat). Satisfactory operation performances at high efficiency with the low-voltage power supply. Mini Power type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine packing. (Ta=25˚C) Ratings 20 20 5 2 1 1 150 –55 ~ +150 1cm2 Unit V V V A A W ˚C ˚C 2.6±0.1 0.4max. 45° 1.0–0.2 +0.1 0.4±0.08 0.5±0.08 1.5±0.1 3.0±0.15 4.0–0.20 0.4±0.04 s

ABSOLUTE MAXIMUM RATINGS

Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature * 3 2 1 Symbol VCBO VCEO VEBO ICP IC PC* Tj Tstg marking 1:Base 2:Collector 3:Emitter EIAJ:SC–62 Mini Power Type Package Marking symbol : R Printed circuit board: Copper foil area of thickness of 1.7mm for the collector portion or more, and the board s

ELECTRICAL CHARACTERISTICS

Parameter Col...
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