Panasonic 2SD1330
Silicon NPN Transistor
ABSOLUTE MAXIMUM RATINGS
Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg (Ta=25˚C) Ratings 25 20 12 1 0.5 600 150 –55 ~ +150 Unit V V V A A mW ˚C ˚C 1:Base 2:Collector 3:Emitter 2.5 2.5 3 2 1 EIAJ:SC–71 M Type Mold Package sELECTRICAL CHARACTERISTICS
Parameter Collector cutoff current Collector to base voltage Collector to emitter voltage Emitter to base voltage Forward current transfer ratio Collector to emitter saturation voltage Base to emitter saturation voltage Transition frequency Collector output capacitance ON resistanse *1h (Ta=25˚C) Symbol ICBO VCBO VCEO VEBO hFE1 hFE2 VCE(sat) VBE(sat) fT Cob Ron*3 *3R on *1 Conditions VCB = 25V, IC = 0 IC = 10µA, IE = 0 IC = 1mA, IB = 0 IE = 10µA, IC = 0 VCE = 2V, IC = 0.5A*2 VCE = 2V, IC = 1A*2 IC = 0.5A, IB = 20mA IC = 0.5A, IB = 50mA VCB = 10V, IE = –50mA, f = 200MHz VCB = 10V, IE = 0, f = 1MHz min typ 1.25±0.05 Low collector to emitter saturation voltage VCE(sat).