Panasonic 2SD1385
Silicon NPN Transistor
| Part No. | 2SD1385 |
|---|---|
| Datasheet | 2SD1385 Download |
| Manufacturer |  Panasonic |
| Description | Silicon NPN Transistor |
| Buy | Stock & Price |
FEATURES
q q q q q 1.5 0.4 1.5 R0.9 R0.9 High collector to base voltage VCBO. High collector to emitter voltage VCEO. Large collector power dissipation PC. Low collector to emitter saturation voltage VCE(sat). M type package allowing easy automatic and manual insertion as well as stand-alone fixing to the printed circuit board. 1.0±0.1 R 0. 0.85 0.55±0.1 1.25±0.05 0.45±0.05 sABSOLUTE MAXIMUM RATINGS
Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature * (Ta=25˚C) Ratings 400 400 5 200 100 1 150 –55 ~ +150 1cm2 Unit V V V mA mA W ˚C ˚C 3 2 1 Symbol VCBO VCEO VEBO ICP IC PC* Tj Tstg 2.5 2.5 1:Base 2:Collector 3:Emitter EIAJ:SC–71 M Type Mold Package Printed circuit board: Copper foil area of thickness of 1.7mm for the collector portion or more, and the board sELECTRICAL CHARACTERISTICS
Parameter Collector to base voltage Collector to emitter...