Panasonic 2SD1776A
Silicon NPN Transistor
FEATURES
q q 0.7±0.1 Unit: mm 10.0±0.2 5.5±0.2 2.7±0.2 4.2±0.2 φ3.1±0.1 1.4±0.1 1.3±0.2 0.8±0.1 0.5 +0.2 –0.1 2.54±0.25 5.08±0.5 1 2 3 4.2±0.2 q sABSOLUTE MAXIMUM RATINGS
Parameter Collector to base voltage Collector to 2SD1776 2SD1776A 2SD1776 Symbol VCBO VCEO VEBO ICP IC IB Ta=25°C PC Tj Tstg (TC=25˚C) Ratings 80 100 60 80 6 4 2 0.5 25 2 150 –55 to +150 Unit V 16.7±0.3 14.0±0.5 emitter voltage 2SD1776A Emitter to base voltage Peak collector current Collector current Base current Collector power TC=25°C dissipation Junction temperature Storage temperature V V A A A W ˚C ˚C Solder Dip 4.0 7.5±0.2 High foward current transfer ratio hFE Satisfactory linearity of foward current transfer ratio hFE Full-pack package which can be installed to the heat sink with one screw 1:Base 2:Collector 3:Emitter TO–220 Full Pack Package(a) sELECTRICAL CHARACTERISTICS
Parameter Collector cutoff current 2SD1776 2SD1776A (TC=25˚C) Symbol ICBO ICEO IEBO Conditions VCB = 80V, IE = 0 VCB = 100V, IE = 0 VCE =...