Panasonic 2SD1938
Silicon NPN epitaxial planar type Transistor
FEATURES
● Low ON resistance Ron● High forward current transfer ratio hFE
● Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing 1 2 (0.65) (0.95) (0.95) 1.9±0.1 2.90+0.20 –0.05 10˚ 1.1+0.2 –0.1 1.1+0.3 –0.1 Unit: mm 0.40+0.10 –0.05 3 1.50+0.25 –0.05 2.8+0.2 –0.3 0.16+0.10 –0.06
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ABSOLUTE MAXIMUM RATINGS
Ta = 25°C Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Emitter-base voltage (Collector open) Collector current Peak collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg Rating 50 20 25 300 500 200 150 −55 to +150 Unit V V V mA mA mW °C °C 1: Base 2: Emitter 3: Collector EIAJ: SC-59 JEDEC: SOT-346 Mini3-G1 Package Marking symbol: 3W●
ELECTRICAL CHARACTERISTICS
Ta = 25°C ± 3°C Parameter Collector-emitter voltage (Base open) Base-emitter voltage Collector-base cutoff current (Emitter open) Emitter-base cutoff current (Col...