2SD1979 Datasheet PDF

ELECTRICAL CHARACTERISTICS

Parameter Collector cutoff current Emitter cutoff current Collector to emitter voltage Forward current transfer ratio Collector to emitter saturation voltage Base to emitter voltage Transition frequency Collector output capacitance ON resistanse *1h (Ta=25˚C) Symbol ICBO IEBO VCEO hFE*1 VCE(sat) VBE fT Cob Ron*2 *2R on Conditions VCB = 50V, IE = 0 VEB = 25V, IC = 0 IC = 1mA, IB = 0 VCE = 2V, IC = 4mA IC = 30mA, IB = 3mA VCE = 2V, IC = 4mA VCB = 6V, IE = –4mA, f = 200MHz VCB = 10V, IE = 0, f = 1MHz min typ max 1 1 0.15–0.05 s

ABSOLUTE MAXIMUM RATINGS

0.2 +0.1 0.3–0 +0.1 s

FEATURES

Unit µA µA V 20 500 2500 0.1 0.6 80 4.5 1.0 V V MHz pF Ω FE Rank classification Rank hFE S 500 ~ 1500 3WS T 800 ~ 2500 3WT Measurement circuit 1kΩ IB=1mA f=1kHz V=0.3V Marking Symbol VB VV VA Ron= VB !1000(Ω) VA–VB 1 Transistor PC — Ta 240 24 Ta=25˚C 200 20 100 2SD1979 IC — VCE 120 VCE=2V 25˚C Ta=75˚C –25˚C IC — VBE Collector power dissipation PC (mW) Collector current IC (mA) 160 16...