Panasonic 2SD1996
Silicon PNP Transistor
FEATURES
q q q q 0.65 max. 14.5±0.5 0.45–0.05 +0.1 Low collector to emitter saturation voltage VCE(sat). Low ON resistance Ron. High foward current transfer ratio hFE. Allowing supply with the radial taping. (Ta=25˚C) Ratings 25 20 12 1 0.5 600 150 –55 ~ +150 Unit V V V A A mW ˚C ˚C 0.45–0.05 2.5±0.5 1 2 2.5±0.5 3 +0.1 Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg Note: In addition to the lead type shown in the upper figure, the type as shown in the lower figure is also available. 1:Emitter 2:Collector 3:Base MT1 Type Package 1.2±0.1 0.65 max. 0.1 0.45+ – 0.05 2.5±0.1 sABSOLUTE MAXIMUM RATINGS
0.85 1.0 sELECTRICAL CHARACTERISTICS
Parameter Collector cutoff current Collector to base voltage Collector to emitter voltage Emitter to base voltage Forward current transfer ratio Collector to emitter s...