Panasonic 2SD2018
Silicon NPN Transistor
| Part No. | 2SD2018 |
|---|---|
| Datasheet | 2SD2018 Download |
| Manufacturer |  Panasonic |
| Description | Silicon NPN Transistor |
| Buy | Stock & Price |
FEATURES
● High forward current transfer ratio hFE● Built-in 60 V Zener diode between base to collector φ 3.16±0.1 3.8±0.3 11.0±0.5 1.9±0.1
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ABSOLUTE MAXIMUM RATINGS
Ta = 25°C Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Emitter-base voltage (Collector open) Collector current Peak collector current Collector power dissipation Junction temperature Storage temperature Tj Tstg TC = 25°C Symbol VCBO VCEO VEBO IC ICP PC Rating 25 60 + −10 +25 60 −10 Unit V V V A A W °C °C B 1 2 3 0.75±0.1 4.6±0.2 5 1 1.5 1.2 5.0 150 −55 to +150 0.5±0.1 0.5±0.1 2.3±0.2 1.76±0.1 16.0±1.0 1: Emitter 2: Collector 3: Base TO-126B-A1 Package Internal Connection C Note) *: With a 100 mm × 100 mm × 2 mm Al heat sick. R1 R2 E●
ELECTRICAL CHARACTERISTICS
Ta = 25°C ± 3°C Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Collector-base cutoff current (Emitter open) Emitter-base cutoff current (Collector open) Forward current transfer ratio...
