Panasonic 2SD2185
Silicon NPN Transistor
FEATURES
q q 4.5±0.1 1.6±0.2 1.5±0.1 Low collector to emitter saturation voltage VCE(sat). Mini Power type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine packing. 2.6±0.1 0.4max. 45° 1.0–0.2 +0.1 0.4±0.08 0.5±0.08 1.5±0.1 4.0–0.20 0.4±0.04 sABSOLUTE MAXIMUM RATINGS
Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature * (Ta=25˚C) Ratings 50 50 5 4 3 Unit V V V A A W ˚C ˚C 1:Base 2:Collector 3:Emitter 3 3.0±0.15 2 1 Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg * marking 1 150 –55 ~ +150 EIAJ:SC–62 Mini Power Type Package Marking symbol : 1H Printed circuit board: Copper foil area of 1cm2 or more, and the board thickness of 1.7mm for the collector portion sELECTRICAL CHARACTERISTICS
Parameter Collector cutoff current Collector to base voltage Collector to emitter voltage Emitter to ba...