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2SD2185 Datasheet PDF

Panasonic 2SD2185

Silicon NPN Transistor

Part No. 2SD2185
Datasheet 2SD2185 Download
Manufacturer
Panasonic
Description Silicon NPN Transistor
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2SD2185 datasheet page 1 preview

FEATURES

q q 4.5±0.1 1.6±0.2 1.5±0.1 Low collector to emitter saturation voltage VCE(sat). Mini Power type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine packing. 2.6±0.1 0.4max. 45° 1.0–0.2 +0.1 0.4±0.08 0.5±0.08 1.5±0.1 4.0–0.20 0.4±0.04 s

ABSOLUTE MAXIMUM RATINGS

Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature * (Ta=25˚C) Ratings 50 50 5 4 3 Unit V V V A A W ˚C ˚C 1:Base 2:Collector 3:Emitter 3 3.0±0.15 2 1 Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg * marking 1 150 –55 ~ +150 EIAJ:SC–62 Mini Power Type Package Marking symbol : 1H Printed circuit board: Copper foil area of 1cm2 or more, and the board thickness of 1.7mm for the collector portion s

ELECTRICAL CHARACTERISTICS

Parameter Collector cutoff current Collector to base voltage Collector to emitter voltage Emitter to ba...
2SD2185 page 2 preview