Panasonic 2SD2321
Silicon NPN Transistor
FEATURES
q q 0.7±0.1 sABSOLUTE MAXIMUM RATINGS
Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Peak collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg (Ta=25˚C) Ratings 40 20 7 5 8 400 150 –55 ~ +150 Unit V V V A A mW ˚C ˚C 1:Emitter 2:Collector 3:Base 1 2 3 1.27 1.27 2.54±0.15 EIAJ:SC–72 New S Type Package sELECTRICAL CHARACTERISTICS
Parameter Collector cutoff current Emitter cutoff current Collector to emitter voltage Emitter to base voltage Forward current transfer ratio Collector to emitter saturation voltage Transition frequency Collector output capacitance (Ta=25˚C) Symbol ICBO ICEO IEBO VCEO VEBO hFE1*1 hFE2 VCE(sat) fT Cob Conditions VCB = 10V, IE = 0 VCE = 10V, IB = 0 VEB = 7V, IC = 0 IC = 1mA, IB = 0 IE = 10µA, IC = 0 VCE = 2V, IC = 0.5A*2 VCE = 2V, IC = 2A*2 IC = 3A, IB = 0.1A*2 VCB = 6V, IE = –50mA, f = 200MHz VCB = 20V, IE = 0, f = 1MHz 20 7 230 150 0.28 150 26 *2 min typ max 0.1 1.0 0.1 2.0±0.2 marking +0.2 0.45–0.1 15.6±0.5 Low collector to emitter saturation voltage VCE(sat).