Panasonic 2SD2345
Silicon NPN Transistor
| Part No. | 2SD2345 |
|---|---|
| Datasheet | 2SD2345 Download |
| Manufacturer |  Panasonic |
| Description | Silicon NPN Transistor |
| Buy | Stock & Price |
FEATURES
q q q q 0.4 0.8±0.1 0.4 High foward current transfer ratio hFE. Low collector to emitter saturation voltage VCE(sat). High emitter to base voltage VEBO. Low noise voltage NV. 1.6±0.1 1.0±0.1 0.5 1 0.5 3 2 0.45±0.1 0.3 0.75±0.15 Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg Ratings 50 40 15 100 50 125 125 –55 ~ +125 Unit V V V mA mA mW ˚C ˚C 1:Base 2:Emitter 3:Collector EIAJ:SC–75 SS–Mini Type Package Marking symbol : 1Z sELECTRICAL CHARACTERISTICS
Parameter Collector cutoff current Collector to base voltage Collector to emitter voltage Emitter to base voltage Forward current transfer ratio Collector to emitter saturation voltage Transition frequency (Ta=25˚C) Symbol ICBO ICEO VCBO VCEO VEBO hFE fT * Conditions VCB = 20V, IE = 0 VCE = 20V, IB = 0 IC = 10µA, IE = 0 IC = 1mA, IB = 0 IE = 1...