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2SD2606 - SILICON NPN DIFFUSED TYPE TRANSISTOR

Key Features

  • q Extremely satisfactory linearity of the forward current transfer ratio hFE q High collector to base voltage VCBO q Wide area of safe operation (ASO) q TO-220(c) type package enabling direct soldering of the radiating fin to the printed circuit board, etc. of small electronic equipment. s Absolute Maximum Ratings (TC=25˚C) Parameter Symbol Ratings Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power TC=.

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Datasheet Details

Part number 2SD2606
Manufacturer Panasonic
File Size 50.04 KB
Description SILICON NPN DIFFUSED TYPE TRANSISTOR
Datasheet download datasheet 2SD2606 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Power Transistors 2SD2606 Silicon NPN diffusion planar type Darlington For power amplification Unit: mm s Features q Extremely satisfactory linearity of the forward current transfer ratio hFE q High collector to base voltage VCBO q Wide area of safe operation (ASO) q TO-220(c) type package enabling direct soldering of the radiating fin to the printed circuit board, etc. of small electronic equipment. s Absolute Maximum Ratings (TC=25˚C) Parameter Symbol Ratings Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power TC=25°C dissipation Ta=25°C VCBO VCEO VEBO ICP IC PC 500 400 12 14 7 50 1.4 Junction temperature Storage temperature Tj 150 Tstg –55 to +150 Unit V V V A A W ˚C ˚C 10.5±0.3 2.