Panasonic 2SD2621
Silicon NPN epitaxial planar type Transistor
FEATURES
● High forward current transfer ratio hFE● Low collector-emitter saturation voltage VCE(sat)
● High emitter-base voltage (Collector open) VEBO 3 0.15 min. 0.80±0.05 1.20±0.05 (0.40) (0.40)
●
ABSOLUTE MAXIMUM RATINGS
Ta = 25°C Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Emitter-base voltage (Collector open) Collector current Peak collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg Rating 100 100 15 20 50 100 125 −55 to +125 Unit V V V mA mA mW °C °C 1 : Base 2 : Emitter 3 : Collector 5˚ 0.80±0.05 1.20±0.05 0.15 min. 0.23+0.05 –0.02 1 2 0 to 0.01 0.52±0.03 5˚ SSSMini3-F1 Package Marking Symbol: 3B●
ELECTRICAL CHARACTERISTICS
Ta = 25°C ± 3°C Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Emitter-base voltage (Collector open) Collector-base cutoff current (Emitter open) Collector-emitter cutoff current (Base open) Forward cur...