Panasonic 2SD638
Silicon NPN Transistor
| Part No. | 2SD638 |
|---|---|
| Datasheet | 2SD638 Download |
| Manufacturer |  Panasonic |
| Description | Silicon NPN Transistor |
| Buy | Stock & Price |
ABSOLUTE MAXIMUM RATINGS
Ta = 25°C Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Emitter-base voltage (Collector open) Collector current Peak collector current Collector power dissipation Junction temperature Storage temperature * 1.0±0.1 (0.85) 2.4±0.2 0.45±0.05 VCBO VCEO VEBO IC ICP PC Tj Tstg 30 25 7 0.5 1 600 150 −55 to +150 V V V A A mW °C °C 3 (2.5) 2 (2.5) 1 1.25±0.05 Symbol Rating Unit 0.55±0.1 1: Base 2: Collector 3: Emitter M-A1 Package●
ELECTRICAL CHARACTERISTICS
Ta = 25°C ± 3°C Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Emitter-base voltage (Collector open) Collector-base cutoff current (Emitter open) Base-emitter saturation voltage Forward current transfer ratio Symbol VCBO VCEO VEBO ICBO ICEO hFE1 * hFE2 Collector-emitter saturation voltage Transition frequency Collector output capacitance (Common base, input open circuited) VCE(sat) fT Cob Conditions IC = 10 µA, IE = 0 IC = 2 mA, IB = 0 I...
