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2SD814A Datasheet PDF

Panasonic 2SD814A

Silicon NPN Transistor

Part No. 2SD814A
Datasheet 2SD814A Download
Manufacturer
Panasonic
Description Silicon NPN Transistor
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2SD814A datasheet page 1 preview

FEATURES

q q q 2.8 –0.3 0.65±0.15 +0.2 0.95 High collector to emitter voltage VCEO. Low noise voltage NV. Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine packing. (Ta=25˚C) 1.5 –0.05 +0.25 0.65±0.15 0.95 2.9 –0.05 1 1.9±0.2 +0.2 3 0.4 –0.05 +0.1 s

ABSOLUTE MAXIMUM RATINGS

Parameter Collector to base voltage Collector to 2SD814 2SD814A 2SD814 VCBO VCEO VEBO ICP IC PC Tj Tstg Symbol 2 1.45 1.1 –0.1 +0.2 Ratings 150 185 150 185 5 100 50 200 150 –55 ~ +150 Unit V emitter voltage 2SD814A Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature V V mA mA mW ˚C ˚C 1:Base 2:Emitter 3:Collector JEDEC:TO–236 EIAJ:SC–59 Mini Type Package Marking symbol : P(2SD814) L(2SD814A) s

ELECTRICAL CHARACTERISTICS

Parameter Collector cutoff current Collector to emitter voltage 2SD814 2SD814A (Ta=25˚C) Symbol ICBO VCEO VEBO hFE* VCE(sat) fT Cob NV Conditions V...
2SD814A page 2 preview