Panasonic 2SD966
Silicon NPN epitaxial planer type Transistor
| Part No. | 2SD966 |
|---|---|
| Datasheet | 2SD966 Download |
| Manufacturer |  Panasonic |
| Description | Silicon NPN epitaxial planer type Transistor |
| Buy | Stock & Price |
ABSOLUTE MAXIMUM RATINGS
0.7–0.2 +0.3 Low collector to emitter saturation voltage VCE(sat). Satisfactory operation performances at high efficiency with the low-voltage power supply. 0.7± 0.1 8.6± 0.2 sFEATURES
0.45–0.1 1.27 +0.2 sELECTRICAL CHARACTERISTICS
Parameter Collector cutoff current Emitter cutoff current Collector to emitter voltage Emitter to base voltage Forward current transfer ratio Collector to emitter saturation voltage Transition frequency Collector output capacitance (Ta=25˚C) Symbol ICBO IEBO VCEO VEBO hFE1 hFE2 VCE(sat) fT Cob *1 Conditions VCB = 10V, IE = 0 VEB = 7V, IC = 0 IC = 1mA, IB = 0 IE = 10µA, IC = 0 VCE = 2V, IC = 0.5A*2 VCE = 2V, IC = 2A*2 IC = 3A, IB = 0.1A*2 VCB = 6V, IE = –50mA, f = 200MHz VCB = 20V, IE = 0, f = 1MHz min 3.2 1 2 3 1:Emitter 2:Collector 3:Base EIAJ:SC–51 TO–92L Package typ max 0.1 0.1 Unit µA µA V V 20 7 230 150 1 150 50 *2 600 V MHz pF Pulse measurement *1h FE1 Rank classification Q 230 ~ 380 R 340 ~ 600 Rank hFE1 1 Transistor PC — Ta...