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2SJ0164 - Silicon P-channel FET

Key Features

  • s.
  • Low ON resistance.
  • Low-noise characteristics.
  • Absolute Maximum Ratings Ta = 25°C Parameter Symbol Rating Gate-drain surrender voltage Drain current Gate current Power dissipation Channel temperature Storage temperature VGDS ID IG PD Tch Tstg 65.
  • 20.
  • 10 300 150.
  • 55 to +150 Unit V mA mA mW °C °C.
  • Package.
  • Code NS-A1.
  • Pin Name 1: Source 2: Gate 3: Drain.
  • Electrical Characteristics Ta = 25°C ± 3°C Parameter Symb.

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ForTfhuartWnhekTerayhiipoTsnouhflpfaoorrongorikmdzyauyetoicoftuouroinrfs,poaranptlniobteyeratnaorscvoweeaus.iilcblnaoegbnltteoahifuctrsorodtmuahtraeyassrahlheaeenvseeetoswfc.failacuoesfse.oduryopru.oduct lineup. This product complies with the RoHS Directive (EU 2002/95/EC).