Panasonic 2SJ0164
Silicon P-channel FET
| Part No. | 2SJ0164 |
|---|---|
| Datasheet | 2SJ0164 Download |
| Manufacturer |  Panasonic |
| Description | Silicon P-channel FET |
| Buy | Stock & Price |
FEATURES
● Low ON resistance● Low-noise characteristics
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ABSOLUTE MAXIMUM RATINGS
Ta = 25°C Parameter Symbol Rating Gate-drain surrender voltage Drain current Gate current Power dissipation Channel temperature Storage temperature VGDS ID IG PD Tch Tstg 65 −20 −10 300 150 −55 to +150 Unit V mA mA mW °C °C● Package
● Code NS-A1
● Pin Name 1: Source 2: Gate 3: Drain
●
ELECTRICAL CHARACTERISTICS
Ta = 25°C ± 3°C Parameter Symbol Conditions Min Typ Max Unit Gate-drain surrender voltage Drain-source current * Gate-source cutoff current Gate-source cutoff voltage Mutual conductance Short-circuit forward transfer capacitance (Common source) VGDS IDSS IGSS VGSC gm Ciss IG = 10 µA, VDS = 0 VDS = −10 V, VGS = 0 VGS = 30 V, VDS = 0 VDS = −10 V, ID = −10 µA VDS = −10 V, ID = −1 mA, f = 1 kHz VDS = −10 V, VGS = 0, f = 1 MHz 65 − 0.6 −6.0 10 1.5 3.5 1.8 2.5 10 V mA nA V mS pF Reverse transfer capacitance (Common source) Crss 3 pF Drain-source ON resistance RDS(on) VDS = −10 mV, VGS = 0 300 Ω Note) 1.
