2SJ164 Datasheet PDF

FEATURES

q Low ON-resistance q Low-noise characteristics unit: mm 4.0±0.2 3.0±0.2 0.7±0.1 s

ABSOLUTE MAXIMUM RATINGS

(Ta = 25°C) Parameter Gate to Drain voltage Drain current Gate current Allowable power dissipation Channel temperature Storage temperature Symbol VGDS ID IG PD Tch Tstg Ratings 65 −20 −10 300 150 −55 to +150 Unit V mA mA mW °C °C 1.27 1.27 1 2 3 2.0±0.2 marking +0.2 0.45–0.1 2.54±0.15 1: Source 2: Gate 3: Drain EIAJ: SC-72 New S Type Package s

ELECTRICAL CHARACTERISTICS

(Ta = 25°C) Parameter Drain to Source cut-off current Gate to Source leakage current Gate to Drain voltage Gate to Source cut-off voltage Forward transfer admittance Drain to Source ON-resistance Symbol IDSS* IGSS VGDS VGSC | Yfs | RDS(on) Coss Conditions VDS = −10V, VGS = 0 VGS = 30V, VDS = 0 IG = 10µA, VDS = 0 VDS = −10V, ID = −10µA VDS = −10V, ID = −1mA, f = 1kHz VDS = −10mV, VGS = 0 VDS = −10V, VGS = 0, f = 1MHz 1.8 65 1.5 2.5 300 10 3 3 3.5 min − 0.2 typ max −6 10 Unit mA nA V V mS Ω pF pF pF Input c...