Panasonic 2SK0655
Silicon N-Channel MOSFET
FEATURES
0.75 max. 4.0±0.2 (0.8) 3.0±0.2 2.0±0.2 IABSOLUTE MAXIMUM RATINGS
(Ta = 25°C) Parameter Drain to Source voltage Gate to Source voltage Drain current Max drain current Allowable power dissipation Channel temperature Storage temperature Symbol VDS VGSO ID IDP PD Tch Tstg Ratings 50 8 100 200 200 150 −55 to +150 Unit V V mA mA mW °C °C 0.45+0.20 –0.10 (2.5) (2.5) 0.45+0.20 –0.10 0.7±0.1 15.6±0.5 G High-speed switching G Allowing to supply with the radial taping (0.8) 7.6 2 3 1 1: Source 2: Drain 3: Gate NS-B1 Package Internal Connection D G S IELECTRICAL CHARACTERISTICS
(Ta = 25°C) Parameter Drain to Source cut-off current Gate to Source leakage current Drain to Source breakdown voltage Gate threshold voltage Drain to Source ON-resistance Forward transfer admittance Input capacitance (Common Source) Output capacitance (Common Source) Reverse transfer capacitance (Common Source) Turn-on time Turn-off time * Symbol IDSS IGSS VDSS Vth RDS(on) | Yfs | Ciss Coss Crss ton* toff* Cond...