Panasonic 2SK123
Silicon N-Channel MOSFET
| Part No. | 2SK123 |
|---|---|
| Datasheet | 2SK123 Download |
| Manufacturer |  Panasonic |
| Description | Silicon N-Channel MOSFET |
| Buy | Stock & Price |
FEATURES
q High mutual conductance gm q Low noise voltage of NV 0.4−0.05 +0.1 2.4±0.1 1 0.95 0.95 1.9±0.2 1.5−0.05 +0.25 1.9±0.1 1.45 2 0.16−0.06 +0.1 +0.1 3 sABSOLUTE MAXIMUM RATINGS
(Ta = 25°C) Parameter Drain to Source voltage Drain to Gate voltage Drain to Source current Drain to Gate current Gate to Source current Allowable power dissipation Operating ambient temperature Storage temperature Symbol VDSO VDGO IDSO IDGO IGSO PD Topr Tstg Ratings 20 20 2 2 2 200 −20 to +80 −55 to +150 Unit V V mA mA mA mW °C °C 0.4−0.05 +0.1 0.4−0.05 1: Drain 2: Source 3: Gate Mini Flat Package (3-pin) Marking Symbol: 1H Note: For the forming type, (Y) is indicated after the part No. sELECTRICAL CHARACTERISTICS
(Ta = 25°C) Parameter Current consumption Drain to Source cut-off current Mutual conductance Noise figure Symbol ID IDSS gm NV Conditions VD = 4.5V, CO = 10pF, RD = 2.2kΩ ± 1% VDS = 4.5V, VGS = 0 VD = 4.5V, VGS = 0, f = 1kHz VD = 4.5V, RD = 2.2kΩ ± 1% CO = 10pF, A-curve VD = 4.5V, RD = 2.2kΩ...