2SK1803 - Silicon N-Channel MOSFET

Panasonic

Key Features

q Avalanche capacity guaranteed: EAS > 60mJ q VGSS = ±30V guaranteed q High-speed switching: tf = 80ns q No secondary breakdown s.

2SK1803 silicon n-channel mosfet by Panasonic - Datasheet Preview

Datasheet Details

Part number	2SK1803
Manufacturer	Panasonic
File Size	46.41 KB
Description	Silicon N-Channel MOSFET
Datasheet	2SK1803 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Power F-MOS FETs 2SK1803 Silicon N-Channel Power F-MOS FET s Features q Avalanche capacity guaranteed: EAS > 60mJ q VGSS = ±30V guaranteed q High-speed switching: tf = 80ns q No secondary breakdown s Applications q Contactless relay q Diving circuit for a solenoid q Driving circuit for a motor q Control equipment q Switching power supply s Absolute Maximum Ratings (TC = 25°C) Parameter Symbol Ratings Drain to Source breakdown voltage Gate to Source voltage Drain current DC Pulse Avalanche energy capacity VDSS VGSS ID IDP EAS* 900 ±30 ±8 ±16 60 Allowable power dissipation TC = 25°C Ta = 25°C PD 100 3 Channel temperature Storage temperature Tch 150 Tstg −55 to +150 * L = 1.