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Power F-MOS FETs
2SK1834
Silicon N-Channel Power F-MOS
s Features
q Avalanche energy capability guaranteed : EAS > 15mJ q VGSS=±30V guaranteed q High-speed switching : tf = 25ns q No secondary breakdown
s Applications
q Non-contact relay q Solenoid drive q Motor drive q Control equipment q Switching mode regulator
s Absolute Maximum Ratings (Tc = 25˚C)
Parameter
Drain-Source breakdown voltage
Gate-Source voltage
Drain current
DC Pulse
Avalanche energy capability
Allowable power dissipation
TC= 25˚C Ta= 25˚C
Channel temperature
Storage temperature
* L= 7.