Panasonic 2SK2339
Silicon N-Channel Power F-MOS
FEATURES
q Avalanche q Low q No Unit : mm 8.5±0.2 6.0±0.5 3.4±0.3 1.0±0.1 energy capability guaranteed ON-resistance 10.0±0.3 secondary breakdown drive 1.5±0.1 q Low-voltage sAPPLICATIONS
10.5min. 1.5max. 2.0 1.1max. q Non-contact q Solenoid q Motor relay drive 0.8±0.1 0.5max. drive equipment mode regulator 2.54±0.3 5.08±0.5 1 2 3 q Control q Switching sABSOLUTE MAXIMUM RATINGS
(Tc = 25˚C) Parameter Drain-Source breakdown voltage Gate-Source voltage Drain current DC Pulse TC = 25˚C Ta= 25˚C Symbol VDSS VGSS ID IDP EAS * PD Tch Tstg Rating 80±10 ±15 ±10 ±20 62.5 30 1.3 150 –55 to +150 Unit V V A A mJ W ˚C ˚C S G 1 : Gate 2 : Collector 3 : Emitter N Type Package s Equivalent Circuit D Avalanche energy capability Allowable power dissipation Channel temperature Storage temperature * L= 5mH, IL= 5A, 1 pulse sELECTRICAL CHARACTERISTICS
(Tc = 25˚C) Parameter Drain-Source cut-off current Gate-Source leakage current Drain-Source breakdown voltage Gate threshold voltage Drain-Source ON-resist...