2SK3892 - Silicon N-channel power MOSFET

Panasonic

Key Features

s.
Gate-source surrender voltage VGSS : ± 30 guaranteed.
Avalanche energy capacity guaranteed: EAS > 986 mJ.
High-speed switching: tf = 39 ns.
Package.
Code TO-220D-A1.
Pin Name 1: Gate 2: Drain 3: Source Parameter Symbol VDSS VGSS ID IDP Drain-source surrender voltage Gate-source surrender voltage Drain current Peak drain current Avalanche energy capability.
Drain power dissipation Junction temperature Storage temperature EAS PD Tj.

2SK3892 silicon n-channel power mosfet by Panasonic - Datasheet Preview

Datasheet Details

Part number	2SK3892
Manufacturer	Panasonic
File Size	297.67 KB
Description	Silicon N-channel power MOSFET
Datasheet	2SK3892 Datasheet

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Full PDF Text Transcription (Reference)

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This product complies with the RoHS Directive (EU 2002/95/EC). Power MOSFETs 2SK3892 Silicon N-channel power MOSFET For contactless relay, diving circuit for a solenoid, driving circuit for a motor, control equipment and switching power supply  Features  Gate-source surrender voltage VGSS : ± 30 guaranteed  Avalanche energy capacity guaranteed: EAS > 986 mJ  High-speed switching: tf = 39 ns  Package  Code TO-220D-A1  Pin Name 1: Gate 2: Drain 3: Source Parameter Symbol VDSS VGSS ID IDP Drain-source surrender voltage Gate-source surrender voltage Drain current Peak drain current Avalanche energy capability * Drain power dissipation Junction temperature Storage temperature EAS PD Tj Ta = 25°C Tstg Note) *: L = 2.