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2SK3892 - Silicon N-channel power MOSFET

Datasheet Summary

Features

  • s.
  • Gate-source surrender voltage VGSS : ± 30 guaranteed.
  • Avalanche energy capacity guaranteed: EAS > 986 mJ.
  • High-speed switching: tf = 39 ns.
  • Package.
  • Code TO-220D-A1.
  • Pin Name 1: Gate 2: Drain 3: Source Parameter Symbol VDSS VGSS ID IDP Drain-source surrender voltage Gate-source surrender voltage Drain current Peak drain current Avalanche energy capability.
  • Drain power dissipation Junction temperature Storage temperature EAS PD Tj.

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Datasheet Details

Part number 2SK3892
Manufacturer Panasonic
File Size 297.67 KB
Description Silicon N-channel power MOSFET
Datasheet download datasheet 2SK3892 Datasheet
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Full PDF Text Transcription

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This product complies with the RoHS Directive (EU 2002/95/EC). Power MOSFETs 2SK3892 Silicon N-channel power MOSFET For contactless relay, diving circuit for a solenoid, driving circuit for a motor, control equipment and switching power supply  Features  Gate-source surrender voltage VGSS : ± 30 guaranteed  Avalanche energy capacity guaranteed: EAS > 986 mJ  High-speed switching: tf = 39 ns  Package  Code TO-220D-A1  Pin Name 1: Gate 2: Drain 3: Source Parameter Symbol VDSS VGSS ID IDP Drain-source surrender voltage Gate-source surrender voltage Drain current Peak drain current Avalanche energy capability * Drain power dissipation Junction temperature Storage temperature EAS PD Tj Ta = 25°C Tstg Note) *: L = 2.
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