2SK3892 Description
This product plies with the RoHS Directive (EU 2002/95/EC). Power MOSFETs 2SK3892 Silicon N-channel power MOSFET For contactless relay, diving circuit for a solenoid, driving circuit for a motor, control equipment and switching power supply.
2SK3892 Key Features
- Gate-source surrender voltage VGSS : ± 30 guaranteed
- Avalanche energy capacity guaranteed: EAS > 986 mJ
- High-speed switching: tf = 39 ns
- Package
- Code TO-220D-A1
- Pin Name 1: Gate 2: Drain 3: Source
- Drain power dissipation Junction temperature Storage temperature
- Electrical Characteristics TC = 25°C±3°C