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2SK3892 - Silicon N-channel power MOSFET

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Panasonic

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2SK3892 Silicon N-channel power MOSFET by Panasonic - Datasheet Preview — Datasheet preview – 2SK3892

Datasheet Details

Part number	2SK3892
Manufacturer	Panasonic
File Size	297.67 KB
Description	Silicon N-channel power MOSFET
Datasheet	2SK3892 Datasheet
Additional preview pages of the 2SK3892 datasheet.

Product details

Features

s.
Gate-source surrender voltage VGSS : ± 30 guaranteed.
Avalanche energy capacity guaranteed: EAS > 986 mJ.
High-speed switching: tf = 39 ns.
Package.
Code TO-220D-A1.
Pin Name 1: Gate 2: Drain 3: Source Parameter Symbol VDSS VGSS ID IDP Drain-source surrender voltage Gate-source surrender voltage Drain current Peak drain current Avalanche energy capability.
Drain power dissipation Junction temperature Storage temperature EAS PD Tj.

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Published: Aug 8, 2013 |