2SK4208 Overview
Plehtatsp:e/M/vaiiwsniwttefw.nolsalenocmwiie/cnpolDgdiina.ssUncpceRoaodLnnnttiapidalinmsnbasuaouiocneneniuoetdtdcnd.ieltticnnaytnmocalp.eujaniuesepctn/ddtieeetentsnfyn/yfopaproelnelmdcoaetwitioynnpg.efourDisMcaionnttieProductnnulifecycleaenstage.dce/ Power MOS FETs This product plies with the RoHS Directive (EU 2002/95/EC). 2SK4208 Silicon N-channel enhancement MOS FET For high speed switching circuits.
2SK4208 Key Features
- Gate-source surrender voltage VGSS : ±30 V guaranteed
- Avalanche energy capability guaranteed: EAS > 801 mJ
- High-speed switching: tf = 88 ns (typ.)