q Avalanche energy capacity guaranteed q High-speed switching q Low ON-resistance q No secondary breakdown q Low-voltage drive q High electrostatic breakdown voltage
unit: mm
15.5±0.5
4.5
φ3.2±0.1
10.0
3.0±0.3
26.5±0.5
18.6±0.5
q Contactless relay q Diving circuit for a solenoid q Driving circuit for a motor q Control equipment www. DataSheet4U. com q Switching power supply
2.0 1.2
5˚ 4.0 2.0±0.2 1.1±0.1
2.0
5˚ 5˚
0.7±0.1
s Absolute Maximum Ratings (TC = 25°C)
Parameter Drain to Source.
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Power F-MOS FETs
2SK3028 (Tentative)
Silicon N-Channel Power F-MOS FET
s Features
q Avalanche energy capacity guaranteed q High-speed switching q Low ON-resistance q No secondary breakdown q Low-voltage drive q High electrostatic breakdown voltage
unit: mm
15.5±0.5
4.5
φ3.2±0.1
10.0
3.0±0.3
26.5±0.5
18.6±0.5
q Contactless relay q Diving circuit for a solenoid q Driving circuit for a motor q Control equipment www.DataSheet4U.com q Switching power supply
2.0 1.2
5˚ 4.0 2.0±0.2 1.1±0.1
2.0
5˚ 5˚
0.7±0.1
s Absolute Maximum Ratings (TC = 25°C)
Parameter Drain to Source breakdown voltage Gate to Source voltage Drain current DC Pulse Symbol VDSS VGSS ID IDP EAS* PD Tch Tstg Ratings 60 ±20 ±100 ±200 500 100 3 150 −55 to +150 Unit V V A A mJ
5.45±0.3
3.3±0.3 0.7±0.1
5.45±0.3
5.5±0.
3028 Datasheet