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AQV214EH Datasheet Photomos Relay

Manufacturer: Panasonic

Overview: DIP6-pin type, reinforced insulation available GE 1 Form A (AQV21❍EH) 8.8 .346 6.4 .252 8.8 .346 3.9 .154 6.4 .252 3.6 .

This datasheet includes multiple variants, all published together in a single manufacturer document.

Key Features

  • 1. Reinforced insulation of I/O isolation voltage 5,000V (Reinforced insulation type) 2. Controls low-level analog signals PhotoMOS feature extremely low closedcircuit offset voltage to enable control of low-level analog signals without distortion. 3. Stable on-resistance 4. Low-level off state leakage current of max. 1 μA.

Similar Datasheet

Brand Logo Part Number Description Manufacturer
NAiS Logo AQV214E PhotoMOS RELAY NAiS
NAiS Logo AQV214EA PhotoMOS RELAY NAiS

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AQV214EH Distributor