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AQV221NA Datasheet Rf Photomos Relay

Manufacturer: Panasonic

Overview: RF PhotoMOS (AQV221N) Lower output capacitance and RF PhotoMOSon resistance. High speed switching. (Turn on time: 0.2ms, Turn off time: 0.08ms). (AQV221N) 8.8 .346 6.4 .252 3.9 .154 8.8 .346 1 2 3 6.4 .252 3.6 .

This datasheet includes multiple variants, all published together in a single manufacturer document.

Key Features

  • 1. Low output capacitance between output terminals and low ONresistance 2. High speed switching (Turn on time: typ. 200μs) 3. High sensitivity Control loads up to 250mA with input current 5mA 4. Low-level off state leakage current The SSR has an off state leakage current of several milliamperes, where as this PhotoMOS relay has typ. 20pA even with the rated load voltage 5. Controls low-level analog signals PhotoMOS relays features extremely low-closed-circuit offset voltage to enable control of.

More Datasheets from Panasonic

Part Number Description
AQV221N RF PhotoMOS RELAY
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AQV224NS Photo MOS Relay
AQV225 PhotoMOS RELAY / Radio frequent switching
AQV225A PhotoMOS RELAY / Radio frequent switching
AQV227N PhotoMOS RELAY / Low On-Resistance
AQV227NA PhotoMOS RELAY / Low On-Resistance
AQV227NS Photo MOS Relay

AQV221NA Distributor