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AQV414 - Photo MOS Relay

Features

  • 1. Low on-resistance (Typ. 26Ω) for normally-closed type This has been achieved thanks to the built-in MOSFET processed by our proprietary method, DSD (Doublediffused and Selective Doping) method. Cross section of the normally-closed type of power MOS Passivation membrane Source electrode Gate electrode Intermediate insulating membrane N+ P+ N+ N+ P+ N+ Gate oxidation membrane N.
  • N+ Drain electrode 2. Controls low-level analog signals PhotoMOS feature extremely low closedcircu.

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Datasheet Details

Part number AQV414
Manufacturer Panasonic
File Size 142.84 KB
Description Photo MOS Relay
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Full PDF Text Transcription

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Normally closed 6-pin type of 400V load voltage GU 1 Form B (AQV414) 8.8 .346 6.4 .252 8.8 .346 3.9 .154 6.4 .252 3.6 .142 (Height includes standoff) mm inch 16 25 34 RoHS compliant FEATURES 1. Low on-resistance (Typ. 26Ω) for normally-closed type This has been achieved thanks to the built-in MOSFET processed by our proprietary method, DSD (Doublediffused and Selective Doping) method. Cross section of the normally-closed type of power MOS Passivation membrane Source electrode Gate electrode Intermediate insulating membrane N+ P+ N+ N+ P+ N+ Gate oxidation membrane N– N+ Drain electrode 2. Controls low-level analog signals PhotoMOS feature extremely low closedcircuit offset voltage to enable control of low-level analog signals without distortion. 3.
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