AQV414 - Photo MOS Relay

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Panasonic

Part number	AQV414
Manufacturer	Panasonic
File Size	142.84 KB
Description	Photo MOS Relay
Datasheet	AQV414 Datasheet
Additional preview pages of the AQV414 datasheet.

1. Low on-resistance (Typ. 26Ω) for normally-closed type This has been achieved thanks to the built-in MOSFET processed by our proprietary method, DSD (Doublediffused and Selective Doping) method. Cross section of the normally-closed type of power MOS Passivation membrane Source electrode Gate electrode Intermediate insulating membrane N+ P+ N+ N+ P+ N+ Gate oxidation membrane N.
N+ Drain electrode 2. Controls low-level analog signals PhotoMOS feature extremely low closedcircu.

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Published: Feb 9, 2018 |