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GU-E PhotoMOS (AQV414E, AQV41❍EH)VDE (AQV412EH) (Standard type)
TESTING
VDE
(AQV410EH, 414EH) (AQV410EH, 414EH) (Reinforced type)
General use and economy type. DIP (1 Form B) 6-pin type. Reinforced insulation
5,000V type.
GU-E PhotoMOS (AQV414E, AQV41❍EH)
;;;;
8.8 .346
6.4 .252
3.9 .154
8.8 .346
1
2 3
6.4 .252
3.6 .142
mm inch
6 5 4
2. This is the low-cost version
PhotoMOS 1 Form B output type relay. Compared to the previous GU PhotoMOS 1 Form B type relay, the attainment of an economical price that is approximately 22% lower will further broaden its market.
3. Normally closed type (2 Form B) is
low on-resistance. (All AQ❍4 PhotoMOS are Form B
types. And also the Form A types have
a low on-resistance.
AQV414E Datasheet
