Download the AQW214EH datasheet PDF.
This datasheet also includes the AQW212EH variant, as both parts are published together in a single manufacturer document.
DIP8-pin type with reinforced insulation GE 2 Form A
(AQW21❍EH) 9.86 .388 6.4 .252 9.86 .388 3.2 .126 6.4 .252
2.9 .
Key Features
1. Reinforced insulation of 5,000 V More than 0.4 mm internal insulation distance between inputs and outputs. Con-forms to EN41003, EN60950 (reinforced insulation). 2. Applicable for 2 Form A use as well as two independent 1 Form A use 3. Controls low-level analog signals PhotoMOS feature extremely low closedcircuit offset voltage to enable control of low-level analog signals without distortion. 4. High sensitivity and high speed response Can control max. 0.14 A load current with 5 mA input curr.
