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AQW454 - Photo MOS Relays

Features

  • 1. 2 Form B (Normally-closed) type Has been realized thanks to the built-in MOSFET processed by our proprietary method, DSD (Double-diffused and Selective Doping) method. 2. Applicable for 2 Form B use as well as two independent 1 Form B use. 3. Controls low-level analog signals PhotoMOS feature extremely low closedcircuit offset voltage to enable control of low-level analog signals without distortion. 4. High sensitivity and low onresistance Can control max. 0.16 A load current with 5 mA input.

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Datasheet Details

Part number AQW454
Manufacturer Panasonic
File Size 140.28 KB
Description Photo MOS Relays
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Full PDF Text Transcription

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Normally closed (2 Form B) DIP6-pin type Low on-resistance with 400V load voltage HE 2 Form B (AQW454) 9.78 .385 6.4 .252 9.78 .385 3.9 .154 6.4 .252 3.6 .142 (Height includes standoff) mm inch 18 27 36 45 RoHS compliant FEATURES 1. 2 Form B (Normally-closed) type Has been realized thanks to the built-in MOSFET processed by our proprietary method, DSD (Double-diffused and Selective Doping) method. 2. Applicable for 2 Form B use as well as two independent 1 Form B use. 3. Controls low-level analog signals PhotoMOS feature extremely low closedcircuit offset voltage to enable control of low-level analog signals without distortion. 4. High sensitivity and low onresistance Can control max. 0.16 A load current with 5 mA input current. Low on-resistance of Typ. 11 Ω.
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