AQY212EHAZ - PhotoMOS RELAY

This page provides the datasheet information for the AQY212EHAZ, a member of the AQY211EH PhotoMOS RELAY family.

Datasheet Summary

Features

4.78 .188 6.4 .252 3.2 .126 4.78 .188 6.4 .252 2.9 .114.

Panasonic

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Datasheet Details

Part number	AQY212EHAZ
Manufacturer	Panasonic
File Size	474.27 KB
Description	PhotoMOS RELAY
Datasheet	AQY212EHAZ Datasheet
Additional preview pages of the AQY212EHAZ datasheet.

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Full PDF Text Transcription

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GU-E 1 Form A (AQY21EH) High cost-performance DIP4-pin type with reinforced insulation AQY21EH GU-E 1 Form A (AQY21EH) FEATURES 4.78 .188 6.4 .252 3.2 .126 4.78 .188 6.4 .252 2.9 .114 TYPICAL APPLICATIONS • Modem • Telephone equipment • Security equipment • Sensing equipment CAD Data CAD Data mm inch 1 4 2 3 1. Reinforced insulation of 5,000 V More than 0.4 mm internal insulation distance between inputs and outputs. Con-forms to EN41003, EN60950 (reinforced insulation). 2. Controls low-level analog signals PhotoMOS relays feature extremely low closed-circuit offset voltage to enable control of low-level analog signals without distortion. 3. High sensitivity and low onresistance Can control max. 0.13 A load current with 5 mA input current. Low on-resistance of typ.

Published: Jul 28, 2014 |