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AQY410S - Photo MOS Relay

Download the AQY410S datasheet PDF. This datasheet also covers the AQY412S variant, as both devices belong to the same photo mos relay family and are provided as variant models within a single manufacturer datasheet.

Key Features

  • 1. Small SOP4-pin package The device comes in a super-miniature SO package 4-pin type measuring (W) 4.3×(L) 4.4×(H) 2.1 mm (W) .169×(L) .173×(H) .083 inch 2. Low on-resistance The AQ❍4 series (normally closed type) has a low on-resistance. This has been achieved thanks to the built-in MOSFET processed by our proprietary method, DSD (Doublediffused and Selective Doping) method. Cross section of the normally-closed type of power MOS Passivation membrane Source electrode Gate electrode Intermed.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (AQY412S-Panasonic.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

Part Number Description Manufacturer
AQY410SX GU (General Use) Type SOP Series 1- Channel (Form B) 4-Pin Type Nais
AQY410SZ GU (General Use) Type SOP Series 1- Channel (Form B) 4-Pin Type Nais
AQY410EH GU (General Use)-E Type 1-Channel (Form B) 4-pin Type Nais
AQY414S HIGH VOLTAGE/ PHOTO MOS RELAY Etc
AQY210HL PhotoMOS RELAY NAIS

Other Datasheets by Panasonic

Part Number Description
AQY410EH Photo MOS Relay
AQY412EH Photo MOS Relay
AQY412S Photo MOS Relay
AQY414EH Photo MOS Relay
AQY414S Photo MOS Relay

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
4.3 .169 4.4 .173 2.1 .083 mm inch 14 23 RoHS compliant Normally closed SOP4-pin type of 60V/350V/400V load voltage (AQY410S, 414S) (AQY412S) GU SOP 1 Form B (AQY41❍S) FEATURES 1. Small SOP4-pin package The device comes in a super-miniature SO package 4-pin type measuring (W) 4.3×(L) 4.4×(H) 2.1 mm (W) .169×(L) .173×(H) .083 inch 2. Low on-resistance The AQ❍4 series (normally closed type) has a low on-resistance. This has been achieved thanks to the built-in MOSFET processed by our proprietary method, DSD (Doublediffused and Selective Doping) method. Cross section of the normally-closed type of power MOS Passivation membrane Source electrode Gate electrode Intermediate insulating membrane N+ P+ N+ N+ P+ N+ Gate oxidation membrane N– N+ Drain electrode 3.