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AQY410S - Photo MOS Relay

This page provides the datasheet information for the AQY410S, a member of the AQY412S Photo MOS Relay family.

Datasheet Summary

Features

  • 1. Small SOP4-pin package The device comes in a super-miniature SO package 4-pin type measuring (W) 4.3×(L) 4.4×(H) 2.1 mm (W) .169×(L) .173×(H) .083 inch 2. Low on-resistance The AQ❍4 series (normally closed type) has a low on-resistance. This has been achieved thanks to the built-in MOSFET processed by our proprietary method, DSD (Doublediffused and Selective Doping) method. Cross section of the normally-closed type of power MOS Passivation membrane Source electrode Gate electrode Intermed.

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Datasheet preview – AQY410S

Datasheet Details

Part number AQY410S
Manufacturer Panasonic
File Size 146.83 KB
Description Photo MOS Relay
Datasheet download datasheet AQY410S Datasheet
Additional preview pages of the AQY410S datasheet.

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Full PDF Text Transcription

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4.3 .169 4.4 .173 2.1 .083 mm inch 14 23 RoHS compliant Normally closed SOP4-pin type of 60V/350V/400V load voltage (AQY410S, 414S) (AQY412S) GU SOP 1 Form B (AQY41❍S) FEATURES 1. Small SOP4-pin package The device comes in a super-miniature SO package 4-pin type measuring (W) 4.3×(L) 4.4×(H) 2.1 mm (W) .169×(L) .173×(H) .083 inch 2. Low on-resistance The AQ❍4 series (normally closed type) has a low on-resistance. This has been achieved thanks to the built-in MOSFET processed by our proprietary method, DSD (Doublediffused and Selective Doping) method. Cross section of the normally-closed type of power MOS Passivation membrane Source electrode Gate electrode Intermediate insulating membrane N+ P+ N+ N+ P+ N+ Gate oxidation membrane N– N+ Drain electrode 3.
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