AQZ105
Key Features
- Extremely low on-resistance
- Low-level off state leakage current of max. 10 μA
- High I/O isolation voltage of 2,500 V
- Eliminates the need for a counter electromotive protection diode in the drive circuit on the input side
- Eliminates the need for a power supply to drive the power MOSFET
- No restriction on mounting direction
- Low thermoelectromotive force
- Neither noise nor arc at contact
- Sockets are also av
