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B1317 - 2SB1317

Key Features

  • q Satisfactory foward current transfer ratio hFE vs. collector current IC characteristics q Wide area of safe operation (ASO) q High transition frequency fT q Optimum for the output stage of a HiFi audio amplifier s Absolute Maximum Ratings (TC=25˚C) Parameter Symbol Ratings Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power TC=25°C dissipation Ta=25°C VCBO VCEO VEBO ICP IC PC.
  • 180.

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Power Transistors 2SB1317 Silicon PNP triple diffusion planar type For high power amplification Complementary to 2SD1975 s Features q Satisfactory foward current transfer ratio hFE vs. collector current IC characteristics q Wide area of safe operation (ASO) q High transition frequency fT q Optimum for the output stage of a HiFi audio amplifier s Absolute Maximum Ratings (TC=25˚C) Parameter Symbol Ratings Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power TC=25°C dissipation Ta=25°C VCBO VCEO VEBO ICP IC PC –180 –180 –5 –25 –15 150 3.