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B1490 - 2SB1490

Key Features

  • s.
  • Optimum for 80 W HiFi output.
  • High forward current transfer ratio hFE.
  • Low collector-emitter saturation voltage VCE(sat) 26.0±0.5 20.0±0.5 φ 3.3±0.2 5.0±0.3 (3.0) (3.0) (1.5) (1.5) 2.0±0.3 3.0±0.3 1.0±0.2 0.6±0.2 5.45±0.3 (1.5) 2.7±0.3.
  • Absolute Maximum Ratings TC = 25°C Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Emitter-base voltage (Collector open) Collector current Peak collector current Collector power dissip.

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Full PDF Text Transcription (Reference)

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Power Transistors 2SB1490 Silicon PNP epitaxial planar type darlington Unit: mm (10.0) (6.0) (2.0) (4.0) For power amplification Complementary to 2SD2250 ■ Features • Optimum for 80 W HiFi output • High forward current transfer ratio hFE • Low collector-emitter saturation voltage VCE(sat) 26.0±0.5 20.0±0.5 φ 3.3±0.2 5.0±0.3 (3.0) (3.0) (1.5) (1.5) 2.0±0.3 3.0±0.3 1.0±0.2 0.6±0.2 5.45±0.3 (1.5) 2.7±0.3 ■ Absolute Maximum Ratings TC = 25°C Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Emitter-base voltage (Collector open) Collector current Peak collector current Collector power dissipation Ta = 25°C Junction temperature Storage temperature Tj Tstg Symbol VCBO VCEO VEBO IC ICP PC Rating −160 −140 −5 −7 −12 90 3.