Low collector-emitter saturation voltage VCE(sat)
0.7±0.1.
Absolute Maximum Ratings Ta = 25°C
0.7±0.2 12.9±0.5
/ Parameter
Symbol Rating
Unit
e Collector-base voltage (Emitter open) VCBO
60
V
pe) Collector-emitter voltage (Base open) VCEO
50
V
nc d ge. ed ty Emitter-base voltage (Collector open) VEBO
15
2.3±0.2
V
sta tinu Collector current
IC
0.7
A
a e cycle iscon Peak collector current
ICP
1.5
A.
Transistors
2SC2925
Silicon NPN epitaxial planar type
For low-frequency output amplification
Unit: mm
5.0±0.2
4.0±0.2
■ Features
5.1±0.2
• High forward current transfer ratio hFE • Low collector-emitter saturation voltage VCE(sat)
0.7±0.1
■ Absolute Maximum Ratings Ta = 25°C
0.7±0.2 12.9±0.5
/ Parameter
Symbol Rating
Unit
e Collector-base voltage (Emitter open) VCBO
60
V
pe) Collector-emitter voltage (Base open) VCEO
50
V
nc d ge. ed ty Emitter-base voltage (Collector open) VEBO
15
2.3±0.2
V
sta tinu Collector current
IC
0.7
A
a e cycle iscon Peak collector current
ICP
1.5
A
life d, d Collector power dissipation
PC
750
mW
n u duct type Junction temperature
Tj
150
°C
te tin Pro ed Storage temperature
Tstg −55 to +150 °C
0.45+–00..115 2.5+–00..26
2.