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C2925 - 2SC2925

Key Features

  • 5.1±0.2.
  • High forward current transfer ratio hFE.
  • Low collector-emitter saturation voltage VCE(sat) 0.7±0.1.
  • Absolute Maximum Ratings Ta = 25°C 0.7±0.2 12.9±0.5 / Parameter Symbol Rating Unit e Collector-base voltage (Emitter open) VCBO 60 V pe) Collector-emitter voltage (Base open) VCEO 50 V nc d ge. ed ty Emitter-base voltage (Collector open) VEBO 15 2.3±0.2 V sta tinu Collector current IC 0.7 A a e cycle iscon Peak collector current ICP 1.5 A.

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Part Number Description
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Transistors 2SC2925 Silicon NPN epitaxial planar type For low-frequency output amplification Unit: mm 5.0±0.2 4.0±0.2 ■ Features 5.1±0.2 • High forward current transfer ratio hFE • Low collector-emitter saturation voltage VCE(sat) 0.7±0.1 ■ Absolute Maximum Ratings Ta = 25°C 0.7±0.2 12.9±0.5 / Parameter Symbol Rating Unit e Collector-base voltage (Emitter open) VCBO 60 V pe) Collector-emitter voltage (Base open) VCEO 50 V nc d ge. ed ty Emitter-base voltage (Collector open) VEBO 15 2.3±0.2 V sta tinu Collector current IC 0.7 A a e cycle iscon Peak collector current ICP 1.5 A life d, d Collector power dissipation PC 750 mW n u duct type Junction temperature Tj 150 °C te tin Pro ed Storage temperature Tstg −55 to +150 °C 0.45+–00..115 2.5+–00..26 2.