• Part: C3312
  • Description: Silicon NPN Transistor
  • Category: Transistor
  • Manufacturer: Panasonic
  • Size: 218.49 KB
Download C3312 Datasheet PDF
Panasonic
C3312
Features 0.75 max. - Optimum for high-density mounting - Allowing supply with the radial taping - Low noise voltage NV - Absolute Maximum Ratings Ta = 25°C / Parameter Symbol Rating Unit e ) Collector-base voltage (Emitter open) VCBO V c type Collector-emitter voltage (Base open) VCEO V n d ge. ed Emitter-base voltage (Collector open) VEBO V le sta ntinu Collector current 100 m A a e cyc isco Peak collector current 200 m A life d, d Collector power dissipation 300 m W n u duct type Junction temperature Tj °C te tin Pro ued Storage temperature Tstg - 55 to +150 °C 0.45+- 00..1200 (2.5) (2.5) 0.45+- 00..1200 0.7±0.1 1: Emitter 2: Collector 3: Base NS-B1 Package in n es follopwlianngefdoudriscontin - Electrical Characteristics Ta = 25°C ± 3°C a o clud pe, Parameter Symbol Conditions Min Typ Max Unit c ed in ce ty Collector-base voltage (Emitter open) VCBO IC = 10 µA, IE = 0 V tinu nan Collector-emitter voltage (Base open) VCEO...