C3757
C3757 is Silicon NPN Transistor manufactured by Panasonic.
Features
- Low collector-emitter saturation voltage VCE(sat)
- Mini type package, allowing downsizing of the equipment and au-
0.40+- 00..0150 3
0.16+- 00..0160
0.4±0.2
1.50- +00..0255 2.8- +00..32 tomatic insertion through the tape packing and the magazine packing
(0.95) (0.95)
5˚
(0.65)
1.9±0.1
/
- Absolute Maximum Ratings Ta = 25°C
2.90+- 00..0250
10˚
Parameter
Symbol Rating
Unit e pe) Collector-base voltage (Emitter open) VCBO
V c e. d ty Collector-emitter voltage (E-B short) VCES
V n d stag tinue Emitter-base voltage (Collector open) VEBO
0 to 0.1 1.1- +00..12 1.1- +00..13
V a e cle con Collector current
100 m A lifecy , dis Peak collector current
300 m A n u duct typed Collector power dissipation
200 m W te tin Pro ed Junction temperature
Tj
°C ur tinu Storage temperature
Tstg
- 55 to +150 °C
Marking Symbol: 2Y
1: Base 2: Emitter 3: Collector EIAJ: SC-59 Mini3-G1 Package in n s followlianngefdodiscon...
