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Transistors
2SC3904
www.DataSheet4U.com Silicon NPN epitaxial planar type
For 2 GHz band low-noise amplification ■ Features
• High transition frequency fT • Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine packing
0.40+0.10 –0.05 3
1.50+0.25 –0.05 2.8+0.2 –0.3
Unit: mm
0.16+0.10 –0.06
1
2
(0.65)
(0.95) (0.95) 1.9±0.1 2.90+0.20 –0.05 10˚
■ Absolute Maximum Ratings Ta = 25°C
Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Emitter-base voltage (Collector open) Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC PC Tj Tstg Rating 15 10 2 65 200 150 −55 to +150 Unit V V V mA mW °C °C
1.1+0.2 –0.1
1.1+0.3 –0.