The following content is an automatically extracted verbatim text
from the original manufacturer datasheet and is provided for reference purposes only.
View original datasheet text
Transistors
2SC3934
Silicon NPN epitaxial planar type
For high-frequency wide-band low-noise amplification
Unit: mm
(0.425)
0.3+–00..01
■ Features 3
• High transition frequency fT • S-Mini type package, allowing downsizing of the equipment and
0.15+–00..0150
1.25±0.10 2.1±0.1 5˚
automatic insertion through the tape packing and the magazine packing
1
2
(0.65) (0.65)
1.3±0.1
/ ■ Absolute Maximum Ratings Ta = 25°C
2.0±0.2
Parameter
Symbol Rating
Unit
e pe) Collector-base voltage (Emitter open) VCBO
15
0.2±0.1
V
c e. d ty Collector-emitter voltage (Base open) VCEO
12
V
n d stag tinue Emitter-base voltage (Collector open) VEBO
2.5
0 to 0.1 0.9±0.1 0.9–+00..
C3934 Datasheet
