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Power Transistors
2SC3980
Silicon NPN triple diffusion planar type
For high breakdown voltage high-speed switching ■ Features
(0.7)
15.0±0.3 11.0±0.2
Unit: mm 5.0±0.2
(3.2)
21.0±0.5 15.0±0.2
• High-speed switching • High collector-base voltage (Emitter open) VCBO
φ 3.2±0.1
• Wide safe operation area • Satisfactory linearity of forward current transfer ratio hFE • Full-pack package which can be installed to the heat sink with one
screw
2.0±0.2 1.1±0.1
2.0±0.1 0.6±0.2
/ ■ Absolute Maximum Ratings TC = 25°C
e e) Parameter
Symbol Rating
Unit
16.2±0.5 (3.5)
Solder Dip
c e.
C3980 Datasheet
