Datasheet Summary
Power Transistors
2SC4359
Silicon NPN triple diffusion planar type
For high breakdown voltage high-speed switching
- Features
(0.7)
15.0±0.3 11.0±0.2
Unit: mm 5.0±0.2
(3.2)
- High-speed switching
21.0±0.5 15.0±0.2
- High collector-base voltage (Emitter open) VCBO
φ 3.2±0.1
- Wide safe oeration area
- Satisfactory linearity of forward current transfer ratio hFE
-...