00..12
Parameter
Symbol Rating
Unit
e ) Collector-base voltage (Emitter open) VCBO
500
V
c type Collector-emitter voltage (E-B short) VCES
500
V
n d t.
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Power Transistors
2SC4559
Silicon NPN triple diffusion planar type
4.2±0.2
16.7±0.3 7.5±0.2 0.7±0.1
For high breakdown voltage high-speed switching ■ Features
10.0±0.2 5.5±0.2
Unit: mm 4.2±0.2 2.7±0.2
• High-speed switching
• High collector-emitter voltage (Base open) VCEO
φ 3.1±0.1
• Full-pack package which can be installed to the heat sink with one screw
1.4±0.1
1.3±0.2
/ ■ Absolute Maximum Ratings TC = 25°C
14.0±0.5 Solder Dip
(4.0)
0.8±0.1
0.5+–00..12
Parameter
Symbol Rating
Unit
e ) Collector-base voltage (Emitter open) VCBO
500
V
c type Collector-emitter voltage (E-B short) VCES
500
V
n d tage.
C4559 Datasheet
